rice university


Rice University: Researchers at Rice University released a new laboratory discovery this week that could one day become a new method for the manufacture of computer chips ultra-dense memory.

If the semiconductor industry technology markets, Rice University and PrivaTran Inc., a small technology company in Austin working with her, could benefit financially.

A team of researchers from the laboratory of Professor James Tour Rice demonstrated a new way to create small memory cells called nanocrystal cables that are much smaller than the currently used inside memory chips and can be packed in three-dimensional matrices.

PrivaTran worked in close collaboration with researchers at Rice University to create working prototypes containing 1,000 memory elements. The prototypes are being tested.This is due to a technology that can expand to a prototype of this size has the potential to be further expanded too much larger memory devices.The discovery could potentially be large but is small in size. The researchers have developed nanocrystal cables that are as small as five nanometers (five billionths of a meter) wide, which is much smaller than the critical dimensions of current next-generation chips.

The technology shows promise for both commercial ultra-dense memories and more specialized chips that are resistant to radiation from space and military use.

Certain materials change their resistance in response to a change in voltage. That simple switching behavior, which arises from the material itself, could form the basis of new, compact computer memory—provided the material is cheap, robust, and convenient to use. In the New York Times, John Markoff reports a recent development toward that goal. Jun Yao of Rice University and his collaborators have built a switch out of silicon dioxide, a bedrock material of current computers whose resistive switching was previously unsuspected. Markoff also reports that an independent team from Hewlett-Packard is set to announce an advance toward the same goal but with a different "memristor" technology.


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